Научные интересы

Теория и компьтерное моделирование физических процессов в наноструктурах и наноэлетронных, нанофотонных и терагерцовых приборах.

Научные публикации

• V. I. Ryzhii, Photoconductivity characteristics in thin films subjected to crossed electric and magnetic fields, Sov. Phys. Solid. State, vol.11,2078, 1970. • V. Ryzhii, The theory of quantum-dot infrared phototransistors, Semicond. Sci. Technol., vol.11, 759, 1996.
• V Ryzhii, M Ryzhii, T Otsuji, Negative dynamic conductivity of graphene with optical pumping, J. Appl. Phys. vol. 101, 083114, 2007.
• V Ryzhii, A Satou, T Otsuji, Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures, J. Appl. Phys., vol. 101, 2007.
• V I Ryzhii, R A Suris, B S Shchamkhalova, Photoconductivity of a two-dimensional electron gas in a strong magnetic field, Sov. Phys. Semicond., vol.20, 199, 1986.
• V Ryzhii, A Chaplik, R Suris, Absolute negative conductivity and zero-resistance states in two-dimensional electron systems: A plausible scenario, J. Exp. Theor. Phys. Letters,vol. 80, 363, 2004.
• V Ryzhii, M Ryzhii, V Mitin, T Otsuji, Toward the creation of terahertz graphene injection laser, J. Appl. Phys. vol. 110 , 094503, 2011.
• V Ryzhii, M Ryzhii, V Mitin, M S Shur, [PDF] fr Graphene tunneling transit-time terahertz oscillator based on electrically induced p–i–n junction, Appl. Phys. Express, vol. 2, 034503 (2009) ics Express 2 (3), 034503.
• V. Ryzhii , T. Otsuji , and M. Shur, Graphene based plasma-wave devices for terahertz applications, Appl. Phys. Lett. vol. 116, 140501, 2020.
• V. Ryzhii , M. Ryzhii, A. Satou ,et al. Phys. Rev. Appl., vol 16, 064054, 2021.

Премии и награды

• Премия Ленинского Комсомола, 1978 г.
• Почётный знак «За заслуги перед Университетом», МГТУ им. Н. Э. Баумана, 2019 г.
• Fellow (Life) of the IEEE, 2004 г.
• Professor Emeritus of the University of Aizu, Japan, 2012 г.

Персональные профили исследователя

ORCID: orcid.org/0000-0002-5000-3109.