Научные интересы

Теория и компьтерное моделирование физических процессов в наноструктурах и наноэлетронных, нанофотонных и терагерцовых приборах

Научные публикации

V I Ryzhii, Photoconductivity characteristics in thin films subjected to crossed electric and magnetic fields, Sov. Phys. Solid. State, vol.11,2078 (1970)
V. Ryzhii, The theory of quantum-dot infrared phototransistors, Semicond. Sci. Technol., vol.11, 759 (1996)
V Ryzhii, M Ryzhii, T Otsuji, Negative dynamic conductivity of graphene with optical pumping, J. Appl. Phys. vol. 101, 083114 (2007)
V Ryzhii, A Satou, T Otsuji, Plasma waves in two-dimensional electron-hole system in gated graphene heterostructures, J. Appl. Phys., vol. 101, (2007)
V I Ryzhii, R A Suris, B S Shchamkhalova, Photoconductivity of a two-dimensional electron gas in a strong magnetic field, Sov. Phys. Semicond., vol.20, 199 (1986)
V Ryzhii, A Chaplik, R Suris, Absolute negative conductivity and zero-resistance states in two-dimensional electron systems: A plausible scenario, J. Exp. Theor. Phys. Letters,vol. 80, 363 (2004)e
V Ryzhii, M Ryzhii, V Mitin, T Otsuji, Toward the creation of terahertz graphene injection laser, J. Appl. Phys. vol. 110 , 094503 (2011)
V Ryzhii, M Ryzhii, V Mitin, M S Shur, [PDF] fr Graphene tunneling transit-time terahertz oscillator based on electrically induced p–i–n junction, Appl. Phys. Express, vol. 2, 034503 (2009) ics Express 2 (3), 034503
V. Ryzhii , T. Otsuji , and M. Shur, Graphene based plasma-wave devices for terahertz applications, Appl. Phys. Lett. vol. 116, 140501 (2020)
V. Ryzhii , M. Ryzhii, A. Satou ,et al. Phys. Rev. Appl., vol 16, 064054 (2021)

Премии и награды

Премия Ленинского Комсомола.1978
Почетный знак "За заслуги перед Университетом", МГТУ им. Н.Э.Баумана, 2019
Fellow (Life) of the IEEE, 2004
Professor Emeritus of the University of Aizu, Japan, 2012

Персональные профили исследователя

Web of Science:
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РИНЦ:
ORCID: orcid.org/0000-0002-5000-3109
MathSciNet: